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?2003 silicon storage technology, inc. s71152-06-000 11/03 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. mtp is a trademark of silicon storage technology, inc. these specifications are subject to change without notice. data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit (x8) many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 features: ? organized as 32k x8 / 64k x8 / 128k x8 / 256k x8 4.5-5.5v read operation superior reliability ? endurance: at least 1000 cycles ? greater than 100 years data retention low power consumption ? active current: 20 ma (typical) ? standby current: 10 a (typical) fast read access time ? 70 ns ? 90 ns fast byte-program operation ? byte-program time: 20 s (typical) ? chip program time: 0.7 seconds (typical) for sst27sf256 1.4 seconds (typical) for sst27sf512 2.8 seconds (typical) for sst27sf010 5.6 seconds (typical) for sst27sf020 electrical erase using programmer ? does not require uv source ? chip-erase time: 100 ms (typical) ttl i/o compatibility jedec standard byte-wide eprom pinouts packages available ? 32-lead plcc ? 32-lead tsop (8mm x 14mm) ? 28-pin pdip for sst27sf256/512 ? 32-pin pdip for sst27sf010/020 product description the sst27sf256/512/010/020 are a 32k x8 / 64k x8 / 128k x8 / 256k x8 cmos, many-time programmable (mtp) low cost flash, manufactured with sst?s proprietary, high performance superflash technology. the split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. these mtp devices can be electrically erased and programmed at least 1000 times using an external pro- grammer with a 12 volt power supply. they have to be erased prior to programming. these devices conform to jedec standard pinouts for byte-wide memories. featuring high performance byte-program, the sst27sf256/512/010/020 provide a byte-program time of 20 s. designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. data retention is rated at greater than 100 years. the sst27sf256/512/010/020 are suited for applications that require infrequent writes and low power nonvolatile storage. these devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use uv-eproms, otps, and mask roms. to meet surface mount and conventional through hole requirements, the sst27sf256/512 are offered in 32-lead plcc, 32-lead tsop, and 28-pin pdip packages. the sst27sf010/020 are offered in 32-pin pdip, 32-lead plcc, and 32-lead tsop packages. see figures 1, 2, and 3 for pin assignments. device operation the sst27sf256/512/010/020 are a low cost flash solution that can be used to replace existing uv- eprom, otp, and mask rom sockets. these devices are functionally (read and program) and pin compatible with industry standard eprom products. in addition to eprom functionality, these devices also support elec- trical erase operation via an external programmer. they do not require a uv source to erase, and therefore the packages do not have a window. read the read operation of the sst27sf256/512/010/020 is controlled by ce# and oe#. both ce# and oe# have to be low for the system to obtain data from the outputs. once the address is stable, the address access time is equal to the delay from ce# to output (t ce ). data is available at the output after a delay of t oe from the falling edge of oe#, assuming that ce# pin has been low and the addresses have been stable for at least t ce -t oe. when the ce# pin is high, the chip is deselected and a typical standby current of 10 a is consumed. oe# is the output control and is used to gate data from the output pins. the data bus is in high impedance state when either ce# or oe# is high. sst27sf256 / 512 / 010 / 0205.0v-read 256kb / 512kb / 1mb / 2mb (x8) mtp flash memories
2 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 byte-program operation the sst27sf256/512/010/020 are programmed by using an external programmer. the programming mode for sst27sf256/010/020 is activated by asserting 11.4-12.6v on v pp pin, v dd = 4.5-5.5v, v il on ce# pin, and v ih on oe# pin. the programming mode for sst27sf512 is acti- vated by asserting 11.4-12.6v on oe#/v pp pin, v dd = 4.5- 5.5v, and v il on ce# pin. these devices are programmed byte-by-byte with the desired data at the desired address using a single pulse (ce# pin low for sst27sf256/512 and pgm# pin low for sst27sf010/020) of 20 s. using the mtp programming algorithm, the byte-programming process continues byte-by-byte until the entire chip has been programmed. chip-erase operation the only way to change a data from a ?0? to ?1? is by electri- cal erase that changes every bit in the device to ?1?. unlike traditional eproms, which use uv light to do the chip- erase, the sst27sf256/512/010/020 uses an electrical chip-erase operation. this saves a significant amount of time (about 30 minutes for each erase operation). the entire chip can be erased in a single pulse of 100 ms (ce# pin low for sst27sf256/512 and pgm# pin for sst27sf010/020). in order to activate the erase mode for sst27sf256/010/020, the 11.4-12.6v is applied to v pp and a 9 pins, v dd = 4.5-5.5v, v il on ce# pin, and v ih on oe# pin. in order to activate erase mode for sst27sf512, the 11.4-12.6v is applied to oe#/v pp and a 9 pins, v dd = 4.5-5.5v, and v il on ce# pin. all other address and data pins are ?don?t care?. the falling edge of ce# (pgm# for sst27sf010/020) will start the chip-erase operation. once the chip has been erased, all bytes must be verified for ffh. refer to figures 13, 14, and 15 for the flowcharts. product identification mode the product identification mode identifies the devices as the sst27sf256, sst27sf512, sst27sf010 and sst27sf020 and manufacturer as sst. this mode may be accessed by the hardware method. to activate this mode for sst27sf256/010/020, the programming equip- ment must force v h (11.4-12.6v) on address a 9 with v pp pin at v dd (4.5-5.5v) or v ss . to activate this mode for sst27sf512, the programming equipment must force v h (11.4-12.6v) on address a 9 with oe#/v pp pin at v il . two identifier bytes may then be sequenced from the device outputs by toggling address line a 0 . for details, see tables 3, 4, and 5 for hardware operation. table 1: p roduct i dentification address data manufacturer?s id 0000h bfh device id sst27sf256 0001h a3h sst27sf512 0001h a4h sst27sf010 0001h a5h sst27sf020 0001h a6h t1.1 1152 y-decoder i/o buffers 1152 b1.1 address buffer x-decoder dq 7 - dq 0 a 14 - a 0 a 9 oe# ce# v pp superflash memory control logic f unctional b lock d iagram of the sst27sf256
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 3 ?2003 silicon storage technology, inc. s71152-06-000 11/03 y-decoder i/o buffers 1152 b2.1 address buffer x-decoder dq 7 - dq 0 a 15 - a 0 a 9 oe#/v pp ce# superflash memory control logic f unctional b lock d iagram of the sst27sf512 y-decoder i/o buffers 1152 b3.2 address buffer x-decoder dq 7 - dq 0 a ms - a 0 a 9 oe# ce# superflash memory control logic pgm# v pp a ms = a 17 for sst27sf020, a 16 for sst27sf010 f unctional b lock d iagram of the sst27sf010/020
4 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 1: p in a ssignments for 32- lead plcc 1152 32-plcc p1.3 sst27sf256 sst27sf512 sst27sf512 sst27sf010 sst27sf010 sst27sf020 sst27sf020 sst27sf256 sst27sf256 sst27sf512 sst27sf512 sst27sf010 sst27sf010 sst27sf020 sst27sf020 sst27sf256 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 a6 a5 a4 a3 a2 a1 a0 nc dq0 a6 a5 a4 a3 a2 a1 a0 nc dq0 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a8 a9 a11 nc oe# a10 ce# dq7 dq6 a8 a9 a11 nc oe#/v pp a10 ce# dq7 dq6 a14 a13 a8 a9 a11 oe# a10 ce# dq7 a14 a13 a8 a9 a11 oe# a10 ce# dq7 4 3 2 1 32 31 30 a7 a12 v pp nc v dd a14 a13 a7 a12 a15 nc v dd a14 a13 a12 a15 a16 v pp v dd pgm# nc a12 a15 a16 v pp v dd pgm# a17 32-lead plcc top view 14 15 16 17 18 19 20 dq1 dq2 v ss nc dq3 dq4 dq5 dq1 dq2 v ss nc dq3 dq4 dq5 dq1 dq2 v ss dq3 dq4 dq5 dq6 dq1 dq2 v ss dq3 dq4 dq5 dq6
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 5 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 2: p in a ssignments for 32- lead tsop (8 mm x 14 mm ) figure 3: p in a ssignments for 28- pin and 32- pin pdip 1152 32-tsop p2.1 a11 a9 a8 a13 a14 nc nc v dd v pp nc nc a12 a7 a6 a5 a4 a11 a9 a8 a13 a14 nc nc v dd nc nc a15 a12 a7 a6 a5 a4 a11 a9 a8 a13 a14 nc pgm# v dd v pp a16 a15 a12 a7 a6 a5 a4 a11 a9 a8 a13 a14 a17 pgm# v dd v pp a16 a15 a12 a7 a6 a5 a4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 oe#/v pp a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 standard pinout top view die up sst27sf256 sst27sf512 sst27sf512 sst27sf010 sst27sf010 sst27sf020 sst27sf020 sst27sf256 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-pin pdip top view v pp a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 v ss v pp a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 v ss 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 v dd pgm# nc a14 a13 a8 a9 a11 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v dd pgm# a17 a14 a13 a8 a9 a11 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 1152 32-pdip p4.1 sst27sf010 sst27sf010 sst27sf020 sst27sf020 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28-pin pdip top view v pp a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 v ss a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 v ss 28 27 26 25 24 23 22 21 20 19 18 17 16 15 v dd a14 a13 a8 a9 a11 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v dd a14 a13 a8 a9 a11 oe#/v pp a10 ce# dq7 dq6 dq5 dq4 dq3 1152 28-pdip p3.1 sst27sf512 sst27sf256 sst27sf512 sst27sf256
6 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 note: v pph = 11.4-12.6v, v h = 11.4-12.6v note: v pph = 11.4-12.6v, v h = 11.4-12.6v table 2: p in d escription symbol pin name functions a ms 1 -a 0 address inputs to provide memory addresses dq 7 -dq 0 data input/output to output data during read cycles and receive input data during program cycles the outputs are in tri-state when oe# or ce# is high. ce# chip enable to activate the device when ce# is low oe# output enable for sst27sf256/010/020, to gate the data output buffers during read operation oe#/v pp output enable/v pp for sst27sf512, to gate the data output buffers during read operation and high voltage pin during chip-erase and programming operation v pp power supply for program or erase for sst27sf256/010/020, high voltage pin during chip-erase and programming opera- tion 11.4-12.6v v dd power supply to provide 5.0v supply (4.5-5.5v) v ss ground nc no connection unconnected pins. t2.4 1152 1. a ms = most significant address a ms = a 14 for sst27sf256, a 15 for sst27sf512, a 16 for sst27sf010, and a 17 for sst27sf020 table 3: o peration m odes s election for sst27sf256 mode ce# oe# v pp a 9 dq address read v il v il v dd or v ss a in d out a in output disable v il v ih v dd or v ss x 1 1. x can be v il or v ih, but no other value. high z x byte-program v il v ih v pph a in d in a in standby v ih xv dd or v ss xhigh z x chip-erase v il v ih v pph v h high z x program/erase inhibit v ih xv pph xhigh z x product identification v il v il v dd or v ss v h manufacturer?s id (bfh) device id (a3h) a 14 -a 1 =v il , a 0 =v il a 14 -a 1 =v il , a 0 =v ih t3.2 1152 table 4: o peration m odes s election for sst27sf512 mode ce# oe#/v pp a 9 dq address read v il v il a in d out a in output disable v il v ih x 1 1. x can be v il or v ih, but no other value. high z x program v il v pph a in d in a in standby v ih x x high z x chip-erase v il v pph v h high z x program/erase inhibit v ih v pph x high z x product identification v il v il v h manufacturer?s id (bfh) device id (a4h) a 15 -a 1 =v il , a 0 =v il a 15 -a 1 =v il , a 0 =v ih t4.2 1152
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 7 ?2003 silicon storage technology, inc. s71152-06-000 11/03 note: v pph = 11.4-12.6v, v h = 11.4-12.6v table 5: o peration m odes s election for sst27sf010/020 mode ce# oe# pgm# a 9 v pp dq address read v il v il x 1 a in v dd or v ss d out a in output disable v il v ih xxv dd or v ss high z a in program v il v ih v il a in v pph d in a in standby v ih xxxv dd or v ss high z x chip-erase v il v ih v il v h v pph high z x program/erase inhibit v ih xxxv pph high z x product identification v il v il xv h v dd or v ss manufacturer?s id (bfh) device id 2 a ms 3 - a 1 =v il , a 0 =v il a ms 3 - a 1 =v il , a 0 =v ih t5.2 1152 1. x can be v il or v ih, but no other value. 2. device id = a5h for sst27sf010 and a6h for sst27sf020 3. a ms = most significant address a ms = a 16 for sst27sf010 and a 17 for sst27sf020 absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) temperature under bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55c to +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65c to +150c d. c. voltage on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0. 5v to v dd +0.5v transient voltage (<20 ns) on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0v to v dd +2.0v voltage on a 9 and v pp pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to 14.0v package power dissipation capability (ta = 25c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0w through hold lead soldering temperature (10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300c surface mount lead soldering temperature (3 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240c output short circuit current 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 m a 1. outputs shorted for no more than one second. no more than one output shorted at a time. o perating r ange range ambient temp v dd v pp commercial 0c to +70c 4.5-5.5v 11.4-12.6v ac c onditions of t est input rise/fall time . . . . . . . . . . . 10 ns output load . . . . . . . . . . . . . . . . . c l = 100 pf for 90 ns output load . . . . . . . . . . . . . . . . . c l = 30 pf for 70 ns see figures 11 and 12
8 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 table 6: r ead m ode dc o perating c haracteristics for sst27sf256/512/010/020 v dd = 4.5-5.5v, v pp =v dd or v ss (ta = 0c to +70c (commercial)) symbol parameter limits test conditions min max units i dd v dd read current address input=v ilt /v iht at f=1/t rc min v dd =v dd max 30 ma ce#=oe#=v il , all i/os open i ppr v pp read current address input=v ilt /v iht at f=1/t rc min v dd =v dd max, v pp =v dd 100 a ce#=oe#=v il , all i/os open i sb1 standby v dd current (ttl input) 3mace#=v ih , v dd =v dd max i sb2 standby v dd current (cmos input) 100 a ce#=v dd -0.3 v dd =v dd max i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 10 a v out =gnd to v dd , v dd =v dd max v il input low voltage 0.8 v v dd =v dd min v ih input high voltage 2.0 v dd +0.5 v v dd =v dd max v ol output low voltage 0.2 v i ol =2.1 ma, v dd =v dd min v oh output high voltage 2.4 v i oh =-400 a, v dd =v dd min i h supervoltage current for a 9 200 a ce#=oe#=v il , a 9 =v h max t6.6 1152 table 7: p rogram /e rase dc o perating c haracteristics for sst27sf256 v dd =4.5-5.5v, v pp =v pph (ta=25c5c) symbol parameter limits test conditions min max units i dd v dd erase or program current 30 ma ce#=v il, oe#=v ih , v pp =11.4-12.6v, v dd =v dd max i pp v pp erase or program current 3 ma ce#=v il, oe#=v ih , v pp =11.4-12.6v, v dd =v dd max i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 10 a v out =gnd to v dd , v dd =v dd max v h supervoltage for a 9 11.4 12.6 v ce#=oe#=v il, i h supervoltage current for a 9 200 a ce#=oe#=v il, a 9 =v h max v pph high voltage for v pp pin 11.4 12.6 v t7.5 1152
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 9 ?2003 silicon storage technology, inc. s71152-06-000 11/03 table 8: p rogram /e rase dc o perating c haracteristics for sst27sf512 v dd =4.5-5.5v, v pp =v pph (ta=25c5c) symbol parameter limits test conditions min max units i dd v dd erase or program current 30 ma ce#=v il, oe#/v pp =11.4-12.6v, v dd =v dd max i pp v pp erase or program current 3 ma ce#=v il, oe#/v pp =11.4-12.6v, v dd =v dd max i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 10 a v out =gnd to v dd , v dd =v dd max v h supervoltage for a 9 11.4 12.6 v ce#=oe#/v pp =v il, i h supervoltage current for a 9 200 a ce#=oe#/v pp =v il, a 9 =v h max v pph high voltage for oe#/v pp pin 11.4 12.6 v t8.5 1152 table 9: p rogram /e rase dc o perating c haracteristics for sst27sf010/020 v dd =4.5-5.5v, v pp =v pph (ta=25c5c) symbol parameter limits test conditions min max units i dd v dd erase or program current 30 ma ce#=pgm#=v il, oe#=v ih , v pp =11.4-12.6v, v dd =v dd max i pp v pp erase or program current 3 ma ce#=pgm#=v il, oe#=v ih , v pp =11.4-12.6v, v dd =v dd max i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 10 a v out =gnd to v dd , v dd =v dd max v h supervoltage for a 9 11.4 12.6 v ce#=oe#=v il, i h supervoltage current for a 9 200 a ce#=oe#=v il, a 9 =v h max v pph high voltage for v pp pin 11.4 12.6 v t9.5 1152 table 10: r ecommended s ystem p ower - up t imings symbol parameter minimum units t pu-read 1 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. power-up to read operation 100 s t pu-write 1 power-up to write operation 100 s t10.1 1152 table 11: c apacitance (ta = 25c, f=1 mhz, other pins open) parameter description test condition maximum c i/o 1 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. i/o pin capacitance v i/o = 0v 12 pf c in 1 input capacitance v in = 0v 6 pf t11.0 1152
10 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 ac characteristics table 12: r eliability c haracteristics symbol parameter minimum specification units test method n end 1 endurance 1000 cycles jedec standard a117 t dr 1 data retention 100 years jedec standard a103 i lt h 1 latch up 100 ma jedec standard 78 t12.2 1152 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. table 13: r ead c ycle t iming p arameters v dd = 4.5-5.5v (ta = 0c to +70c (commercial)) symbol parameter sst27sf256-70 sst27sf512-70 sst27sf010-70 sst27sf020-70 sst27sf256-90 sst27sf512-90 sst27sf010-90 sst27sf020-90 units min max min max t rc read cycle time 70 90 ns t ce chip enable access time 70 90 ns t aa address access time 70 90 ns t oe output enable access time 35 45 ns t clz 1 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. ce# low to active output 0 0 ns t olz 1 oe# low to active output 0 0 ns t chz 1 ce# high to high-z output 25 30 ns t ohz 1 oe# high to high-z output 25 30 ns t oh 1 output hold from address change 0 0 ns t13.2 1152 table 14: p rogram /e rase c ycle t iming p arameters for sst27sf256 symbol parameter min max units t as address setup time 1 s t ah address hold time 1 s t prt v pp pulse rise time 50 ns t vps v pp setup time 1 s t vph v pp hold time 1 s t pw ce# program pulse width 20 30 s t ew ce# erase pulse width 100 500 ms t ds data setup time 1 s t dh data hold time 1 s t vr v pp and a 9 recovery time 1 s t art a 9 rise time to 12v during erase 50 ns t a9s a 9 setup time during erase 1 s t a9h a 9 hold time during erase 1 s t14.0 1152
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 11 ?2003 silicon storage technology, inc. s71152-06-000 11/03 table 15: p rogram /e rase c ycle t iming p arameters for sst27sf512 symbol parameter min max units t as address setup time 1 s t ah address hold time 1 s t prt oe#/v pp pulse rise time 50 ns t vps oe#/v pp setup time 1 s t vph oe#/v pp hold time 1 s t pw ce# program pulse width 20 30 s t ew ce# erase pulse width 100 500 ms t ds data setup time 1 s t dh data hold time 1 s t vr oe#/v pp and a 9 recovery time 1 s t art a 9 rise time to 12v during erase 50 ns t a9s a 9 setup time during erase 1 s t a9h a 9 hold time during erase 1 s t15.0 1152 table 16: p rogram /e rase c ycle t iming p arameters for sst27sf010/020 symbol parameter min max units t ces ce# setup time 1 s t ceh ce# hold time 1 s t as address setup time 1 s t ah address hold time 1 s t prt v pp pulse rise time 50 ns t vps v pp setup time 1 s t vph v pp hold time 1 s t pw pgm# program pulse width 20 30 s t ew pgm# erase pulse width 100 500 ms t ds data setup time 1 s t dh data hold time 1 s t vr a 9 recovery time for erase 1 s t art a 9 rise time to 12v during erase 50 ns t a9s a 9 setup time during erase 1 s t a9h a 9 hold time during erase 1 s t16.0 1152
12 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 4: r ead c ycle t iming d iagram for sst27sf256/512/010/020 figure 5: c hip -e rase t iming d iagram for sst27sf256 1152 f03.0 data valid data valid t clz t olz t oh t rc t aa t oe t ohz t chz high-z dq 7-0 oe# ce# address t ce 1152 f04a.1 t a9h t vr t vph t vps t ew t prt v dd v ss v pp a 9 v pph v pph v ih v ih v il dq 7-0 ce# oe# address (except a 9 ) t a9s t art t vr
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 13 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 6: r ead c ycle t iming d iagram for sst27sf512 figure 7: c hip -e rase t iming d iagram for sst27sf010/020 1152 f04b.1 t a9h t vr t vph t vps t ew t prt v dd v ss oe#/v pp a 9 v pph v pph v ih v il dq 7-0 ce# address (except a 9 ) t a9s t art t vr 1152 f04c.1 t a9h t vr t vph t vps t ceh t prt v dd v ss v pp a 9 pgm# v pph v pph v ih v ih v il dq 7-0 oe# ce# address (except a 9 ) t a9s t art t ces t ew
14 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 8: b yte -p rogram t iming d iagram for sst27sf256 figure 9: b yte -p rogram t iming d iagram for sst27sf512 1152 f05a.1 data valid address valid t ah t pw t dh t as t ds t vr v dd v pph v ih high-z v ss t vph t prt t vps v pp dq 7-0 ce# oe# address 1152 f05b.2 data valid address valid t ah t pw t dh t as t ds t vr v dd v pph high-z v ss t vph t prt t vps oe#/v pp dq 7-0 ce# address
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 15 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 10: b yte -p rogram t iming d iagram for sst27sf010/020 1152 f05c.1 data valid address valid t ah t ceh t as t ds t dh v dd v pph high-z v ih v ss t ces t pw t vph t prt t vps v pp pgm# dq 7-0 oe# ce# address
16 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 11: ac i nput /o utput r eference w aveforms figure 12: a t est l oad e xample 1152 f06.0 reference points output input v ht v lt v ht v lt v iht v ilt ac test inputs are driven at v iht (2.4 v) for a logic ?1? and v ilt (0.4 v) for a logic ?0?. measurement reference points for inputs and outputs are v ht (2.0 v) and v lt (0.8 v). input rise and fall times (10% ? 90%) are <10 ns. note: v ht - v high te s t v lt - v low te s t v iht - v input high test v ilt - v input low test 1152 f07.1 to tester to dut c l r l low r l high v dd
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 17 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 13: c hip -e rase a lgorithm for sst27sf256 start v pp = v pph, a 9 = v h v pp = v dd or v ss a 9 = v il or v ih wait for v pp and a 9 recovery time erase 100ms pulse (ce# = v il ) read device (ce# = oe# = v il ) device passed compare all bytes to ffh device failed 1152 f08a.2 no ye s
18 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 14: c hip -e rase a lgorithm for sst27sf512 oe#/v pp = v pph oe#/v pp = v dd or v ss a 9 = v il or v ih wait for oe#/v pp and a 9 recovery time erase 100ms pulse (ce# = v il ) read device (ce# = oe# = v il ) device passed compare all bytes to ffh device failed 1152 f08b.2 start a 9 = v h no ye s
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 19 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 15: c hip -e rase a lgorithm for sst27sf010/020 start a 9 = v h , v pp = v pph a 9 = v il or v ih ce# = v il , oe# = v ih wait a 9 recovery time erase 100ms pulse (pgm# = v il ) read device device passed compare all bytes to ffh device failed 1152 f08c.1 pgm# = v ih no ye s
20 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 16: b yte -p rogram a lgorithm for sst27sf256 start erase* v pp = v pph address = first location program 20s pulse (ce# = v il ) read device (ce# = oe# = v il ) device passed compare all bytes to original data increment address device failed 1152 f09a.3 last address? wait for v pp recoverytime v pp = v dd or v ss no no ye s ye s * see figure 13
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 21 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 17: b yte -p rogram a lgorithm for sst27sf512 start erase* oe#/v pp = v pph address = first location program 20s pulse (ce# = v il ) read device (ce# = oe# = v il ) device passed compare all bytes to original data increment address device failed 1152 f09b.2 last address? wait for oe#/v pp recoverytime oe#/v pp = v dd or v ss no no ye s ye s * see figure 14
22 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 figure 18: b yte -p rogram a lgorithm for sst27sf010/020. start erase* v pp = v pph address = first location ce# = v il , oe# = v ih program 20s pulse (pgm# = v il ) read device device passed compare all bytes to original data increment address device failed 1152 f09c.1 last address? no no ye s ye s * see figure 15
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 23 ?2003 silicon storage technology, inc. s71152-06-000 11/03 product ordering information environmental attribute e = non-pb package modifier g = 28 pins h = 32 pins or leads package type n = plcc p = pdip w = tsop (type 1, die up, 8mm x 14mm) temperature range c = commercial = 0c to +70c minimum endurance 3 = 1,000 cycles read access speed 70 = 70 ns 90 = 90 ns device density - x8 organization 020 = 2 mbit 010 = 1 mbit 512 = 512 kbit 256 = 256 kbit function f = chip-erase byte-program voltage range s = 4.5-5.5v product series 27 = many-time programmable flash device speed suffix1 suffix2 suffix3 sst27 s f xxx -xxx -x x -x x x
24 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 valid combinations for sst27sf256 sst27sf256-70-3c-nh sst27sf256-70-3c-wh sst27sf256-70-3c-pg sst27sf256-70-3c-nhe sst27sf256-70-3c-whe SST27SF256-70-3C-PGE sst27sf256-90-3c-nh sst27sf256-90-3c-wh sst27sf256-90-3c-pg sst27sf256-90-3c-nhe sst27sf256-90-3c-whe sst27sf256-90-3c-pge valid combinations for sst27sf512 sst27sf512-70-3c-nh sst27sf512-70-3c-wh sst27sf512-70-3c-pg sst27sf512-70-3c-nhe sst27sf512-70-3c-whe sst27sf512-70-3c-pge sst27sf512-90-3c-nh sst27sf512-90-3c-wh sst27sf512-90-3c-pg sst27sf512-90-3c-nhe sst27sf512-90-3c-whe sst27sf512-90-3c-pge valid combinations for sst27sf010 sst27sf010-70-3c-nh sst27sf010-70-3c-wh sst27sf010-70-3c-ph sst27sf010-70-3c-nhe sst27sf010-70-3c-whe sst27sf010-70-3c-phe sst27sf010-90-3c-nh sst27sf010-90-3c-wh sst27sf010-90-3c-ph sst27sf010-90-3c-nhe sst27sf010-90-3c-whe sst27sf010-90-3c-phe valid combinations for sst27sf020 sst27sf020-70-3c-nh sst27sf020-70-3c-wh sst27sf020-70-3c-ph sst27sf020-70-3c-nhe sst27sf020-70-3c-whe sst27sf020-70-3c-phe sst27sf020-90-3c-nh sst27sf020-90-3c-wh sst27sf020-90-3c-ph sst27sf020-90-3c-nhe sst27sf020-90-3c-whe sst27sf020-90-3c-phe note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combinations.
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 25 ?2003 silicon storage technology, inc. s71152-06-000 11/03 packaging diagrams 32- lead p lastic l ead c hip c arrier (plcc) sst p ackage c ode : nh .040 .030 .021 .013 .530 .490 .095 .075 .140 .125 .032 .026 .032 .026 .029 .023 .453 .447 .553 .547 .595 .585 .495 .485 .112 .106 .042 .048 .048 .042 .015 min. top view side view bottom view 1 232 .400 bsc 32-plcc-nh-3 note: 1. complies with jedec publication 95 ms-016 ae dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in inches (max/min). 3. dimensions do not include mold flash. maximum allowable mold flash is .008 inches. 4. coplanarity: 4 mils. .050 bsc .050 bsc optional pin #1 identifier .020 r. max. r. x 30?
26 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 32- lead t hin s mall o utline p ackage (tsop) 8 mm x 14 mm sst p ackage c ode : wh 32-tsop-wh-7 note: 1. complies with jedec publication 95 mo-142 ba dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in millimeters (max/min). 3. coplanarity: 0.1 mm 4. maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads. 1.20 max. 1mm pin # 1 identifier 12.50 12.30 14.20 13.80 0.70 0.50 8.10 7.90 0.27 0.17 0. 50 bsc 1.05 0.95 0.15 0.05 0.70 0.50 0?- 5? detail
data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 27 ?2003 silicon storage technology, inc. s71152-06-000 11/03 28- pin p lastic d ual i n - line p ins (pdip) sst p ackage c ode : pg 28-pdip-pg-3 pin #1 identifier c l 28 1 base plane seating plane note: 1. complies with jedec publication 95 mo-015 ah dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in inches (max/min). 3. dimensions do not include mold flash. maximum allowable mold flash is .010 inches. .200 .170 7? 4 plcs. .600 bsc .100 bsc .150 .120 .022 .016 .065 .045 .080 .070 .050 .015 .075 .065 1.455 1.445 .012 .008 0? 15? .625 .600 .550 .530
28 data sheet 256 kbit / 512 kbit / 1 mbit / 2 mbit many-time programmable flash sst27sf256 / sst27sf512 / sst27sf010 / sst27sf020 ?2003 silicon storage technology, inc. s71152-06-000 11/03 32- pin p lastic d ual i n - line p ins (pdip) sst p ackage c ode : ph revision history number description date 02 2002 data book feb 2002 03 document control release (sst internal): no technical changes apr 2002 04 corrected i h supervoltage current for a 9 from 100a to 200a in tables 6, 7, 8, and 9 jul 2002 05 corrected the test conditions for i dd and i ppr in table 6 on page 8 sep 2003 06 corrected the max value for i pp from 1 ma to 3 ma (see tables 7, 8, and 9) added mpns for non-pb packages (see page 24) nov 2003 32-pdip-ph-3 pin #1 identifier c l 32 1 base plane seating plane note: 1. complies with jedec publication 95 mo-015 ap dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in inches (max/min). 3. dimensions do not include mold flash. maximum allowable mold flash is .010 inches. .200 .170 7? 4 plcs. .600 bsc .100 bsc .150 .120 .022 .016 .065 .045 .080 .070 .050 .015 .075 .065 1.655 1.645 .012 .008 0? 15? .625 .600 .550 .530 silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.sst.com

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